Home > News > Antiferromagnetic coupling in semiconductors: Magnetic materials
April 15th, 2009
Antiferromagnetic coupling in semiconductors: Magnetic materials
Abstract:
The phenomenon known as giant magnetoresistance (GMR), which has won the Nobel prize of physics in 2007, is based on the effect of antiferromagnetic coupling (AFC) between adjacent layers of magnetic materials. This effect has become fundamental for the manufacturing of powerful magnetic data storage devices, such as present day computer hard disks. Until recently, AFC was known only for ferromagnetic materials. Now, a team of scientists from the Department of Physics, Korea University, Seoul, the National Institute of Standards and Technology, Gaithersburg, and the Department of Physics, University of Notre Dame have demonstrated for the first time the existence of this property in semiconductor multilayers [Chung et al., Phys. Rev. Lett. (2008) 101, 237202].
Source:
materialstoday.com
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