Nanotechnology Now

Our NanoNews Digest Sponsors
Heifer International



Home > Press > Leti Demonstrates Ultra-scaled Self-aligned Split-gate Memory Cell With 16nm Gate Length: Benefits Especially for Contactless Applications Include Larger Memory Window, Improved Control of Spacer Memory Gate Shape and Length, And Better Functionality

TEM images of ultra-scaled self-aligned split-gate device, with a memory gate length of 16nm.
TEM images of ultra-scaled self-aligned split-gate device, with a memory gate length of 16nm.

Abstract:
CEA-Leti announced today it has fabricated ultra-scaled split-gate memories with gate length of 16nm, and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V.

Leti Demonstrates Ultra-scaled Self-aligned Split-gate Memory Cell With 16nm Gate Length: Benefits Especially for Contactless Applications Include Larger Memory Window, Improved Control of Spacer Memory Gate Shape and Length, And Better Functionality

Grenoble, France | Posted on March 13th, 2014

The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memory gate shape and length.

Split-gate flash memories are made of two transistors: an access transistor and a memory transistor with a charge-trapping layer (nitride, Si nanocrystals etc.). Split-gate architectures use a low-access voltage and minimize drain current during programming, which leads to a decrease of the programming power compared to standard one-transistor NOR memories. Because programming energy decreases when memory gate length decreases, ultra-scaling is particularly relevant for contactless applications.

Memory gate has been reduced down to 16nm thanks to a poly-Si spacer formed on the sidewall of the select transistor. This approach avoids costly lithography steps during fabrication and solves misalignment issues, which are responsible for a strong variation of the electrical performances, such as the memory window.

The main challenges of this self-aligned technology concern the precise control of the spacer memory gate shape and of the memory gate length. Spacer gate has to fulfil two difficult requirements: being as flat as possible in order to get a silicidation surface as large as possible while insuring a functional contact, and getting a steep edge in order to control the drain-junction doping.

####

About CEA-Leti
By creating innovation and transferring it to industry, Leti is the bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. Backed by its portfolio of 2,200 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched more than 50 startups. Its 8,000m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. Leti’s staff of more than 1,700 includes 200 assignees from partner companies. Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo.

For more information, please click here

Contacts:
CEA-Leti
+33 4 38 78 02 26


Agency
+33 6 64 52 81 10

Copyright © CEA-Leti

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

INRS and ELI deepen strategic partnership to train the next generation in laser science:PhD students will benefit from international mobility and privileged access to cutting-edge infrastructure June 6th, 2025

Electrifying results shed light on graphene foam as a potential material for lab grown cartilage June 6th, 2025

Quantum computers simulate fundamental physics: shedding light on the building blocks of nature June 6th, 2025

A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025

Chip Technology

A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025

Programmable electron-induced color router array May 14th, 2025

Enhancing power factor of p- and n-type single-walled carbon nanotubes April 25th, 2025

Ultrafast plasmon-enhanced magnetic bit switching at the nanoscale April 25th, 2025

Memory Technology

An earth-abundant mineral for sustainable spintronics: Iron-rich hematite, commonly found in rocks and soil, turns out to have magnetic properties that make it a promising material for ultrafast next-generation computing April 25th, 2025

Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024

Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023

Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023

Announcements

INRS and ELI deepen strategic partnership to train the next generation in laser science:PhD students will benefit from international mobility and privileged access to cutting-edge infrastructure June 6th, 2025

Electrifying results shed light on graphene foam as a potential material for lab grown cartilage June 6th, 2025

Quantum computers simulate fundamental physics: shedding light on the building blocks of nature June 6th, 2025

A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project