Home > Press > Iranian Scientists Increase Data Storage Density by Magnetic Nanolayers
Abstract:
Iranian researchers, in cooperation with their British and Belgian counterparts, managed to boost data storage density using magnetic nanolayers.
"The subject of present study lies in line with manufacturing magnetic memory devices using 3D architecture of a ferromagnetic nanolayer. The 3D polyhedral structures were built by electrochemical layer deposition technique and the magnetic properties of a 3D structure was studied individually," Dr. Farzad Nasirpouri, faculty member at Sahand University of Technology, said.
He elaborated on the goal of this research, and said, "We did our research aiming at increasing data storage density by magnetic method."
Explaining about the method adopted in this research, faculty member of Sahand University of Technology said, "The procedure is based on electrochemical layer deposition for synthesizing 3D ferromagnetic structures. Electrochemical deposition was first performed to form a polyhedral model of silver on which one nano nickel layer was deposited. A ferromagnetic shell structure with multiple crystalline sides is resulted."
"The magnetic properties of a single structure (not in the array form) were identified by a nanomagnetic probe hall. The magnetic properties of resulted structures were also simulated by micromagnetic methods."
Elaborating on the results, Dr. Nasirpouri said, "Magnetization curves of 3D ferromagnetic structure shows sharp steps which is related to the number of crystalline polyhedral sides. This is in complete agreement with micromagnetic simulation results. The magnetization mechanism on every side is symmetric and asymmetric vortex which its rotation in sides causes step in magnetization curves. Any of these steps could be utilized for storage of 2-bit magnetic."
The simplification of production, low cost of layer deposition, increase of magnetic states for storage and use of magnetic vortex mechanism are some of the advantages achieved in this research.
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