Home > News > Anneal technique developed for nanoscale transistors
December 6th, 2009
Anneal technique developed for nanoscale transistors
Abstract:
A new technique for producing transistors made of nickel silicide (NiSi) for logic chips of 45 nanometres (nm) or smaller has been unveiled by Applied Materials.
The laser-based anneal system can help assembly manufacturers to create their semiconductor devices faster and improve their power consumption levels, according to the firm.
Source:
rapidonline.com
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