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Home > News > Anneal technique developed for nanoscale transistors

December 6th, 2009

Anneal technique developed for nanoscale transistors

Abstract:
A new technique for producing transistors made of nickel silicide (NiSi) for logic chips of 45 nanometres (nm) or smaller has been unveiled by Applied Materials.

The laser-based anneal system can help assembly manufacturers to create their semiconductor devices faster and improve their power consumption levels, according to the firm.

Source:
rapidonline.com

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