Home > News > Researchers: Ferroelectric DRAM smaller, faster than flash
August 15th, 2009
Researchers: Ferroelectric DRAM smaller, faster than flash
Abstract:
Researchers at Yale University and the Semiconductor Research Corp. (SRC) claim that ferroelectrics are more appropriate for replacing DRAM than flash. Current DRAM technology has to be refreshed every few milliseconds; ferroelectric materials could last minutes without freshing.
Source:
eetimes.com
Bookmark:
| Related News Press |
News and information
Researchers develop molecular qubits that communicate at telecom frequencies October 3rd, 2025
Next-generation quantum communication October 3rd, 2025
"Nanoreactor" cage uses visible light for catalytic and ultra-selective cross-cycloadditions October 3rd, 2025
Memory Technology
Researchers tackle the memory bottleneck stalling quantum computing October 3rd, 2025
First real-time observation of two-dimensional melting process: Researchers at Mainz University unveil new insights into magnetic vortex structures August 8th, 2025
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Announcements
Rice membrane extracts lithium from brines with greater speed, less waste October 3rd, 2025
Researchers develop molecular qubits that communicate at telecom frequencies October 3rd, 2025
Next-generation quantum communication October 3rd, 2025
"Nanoreactor" cage uses visible light for catalytic and ultra-selective cross-cycloadditions October 3rd, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||