Home > News > Researchers: Ferroelectric DRAM smaller, faster than flash
August 15th, 2009
Researchers: Ferroelectric DRAM smaller, faster than flash
Abstract:
Researchers at Yale University and the Semiconductor Research Corp. (SRC) claim that ferroelectrics are more appropriate for replacing DRAM than flash. Current DRAM technology has to be refreshed every few milliseconds; ferroelectric materials could last minutes without freshing.
Source:
eetimes.com
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