Home > News > California Inventors Develop Carbon Nanotube Transistor Device Fabrication Method
December 3rd, 2007
California Inventors Develop Carbon Nanotube Transistor Device Fabrication Method
Abstract:
Thomas W. Tombler of Goleta, Calif., and Brian Y. Lim of Simi Valley, Calif., have developed a method of making a transistor device.
According to the U.S. Patent & Trademark Office: "During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure."
Source:
semiconductor.net
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