Home > News > Industry delays high-k gates at 45-nm
September 20th, 2005
Industry delays high-k gates at 45-nm
Abstract:
The semiconductor industry’s planned shift towards complex high-k dielectric insulator materials for gate-stack applications at the 45-nm node has been delayed, according to an executive from Applied Materials Inc.
Source:
EETimes
Bookmark:
| Related News Press |
Chip Technology
Nanofibrous metal oxide semiconductor for sensory face November 8th, 2024
New discovery aims to improve the design of microelectronic devices September 13th, 2024
Groundbreaking precision in single-molecule optoelectronics August 16th, 2024
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
Announcements
Nanotechnology: Flexible biosensors with modular design November 8th, 2024
Exosomes: A potential biomarker and therapeutic target in diabetic cardiomyopathy November 8th, 2024
Turning up the signal November 8th, 2024
Nanofibrous metal oxide semiconductor for sensory face November 8th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||