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July 13th, 2005

More materials research, investment needed to extend CMOS

Abstract:
Among the revolutionary materials could be nanowires and carbon nanotubes, (C. Mike Garner, director of Intel's Materials Technology Operations) added, along with new photoresist approaches that could, for example, use self-assembly techniques to eliminate the line-edge roughness increasingly seen at 65-nm and lower geometries.

Source:
EETimes

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