Home > News > Low Cost Nanolithography
April 25th, 2005
Low Cost Nanolithography
Abstract:
Leading edge photolithography is now operating at a wavelength of l = 193 nm, and can pattern structures at the 90 nm node. Concurrently, l = 157 nm followed by extreme ultraviolet lithography (EUV, l = 13.2 nm) are being researched to succeed 193 nm optical lithography. This continuous reduction is wavelength combined with highly sophisticated designs of lenses and mirrors, design of advanced and complex masks, innovation in materials, processes, and precision machines will probably enable sub-70nm lithography, and may even enable sub-50 nm lithography.
Source:
siliconindia.com
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