Home > News > New material structure produces world's fastest transistor
April 11th, 2005
New material structure produces world's fastest transistor
Abstract:
A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz transistor for high-speed computing and communications applications could now be within reach.
Source:
UIUC
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