Home > News > RIT to describe solid immersion for 25-nm lithography
February 27th, 2005
RIT to describe solid immersion for 25-nm lithography
Abstract:
During the SPIE Microlithography conference here this week, the Rochester Institute of Technology (RIT) is expected to present a paper on solid immersion lithography for 25-nm designs and beyond.
Source:
* siliconstrategies
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