Home > News > SRAMs readied for 45-nm node
February 11th, 2005
SRAMs readied for 45-nm node
Abstract:
Designers from IBM, Samsung, Texas Instruments and Virage Logic laid out design, test and process issues affecting SRAMs in sub-90-nm devices during a panel session. The next threshold is the 65-nm process node, and challenges increase substantially at the 45-nm process node.
Source:
EETimes
Bookmark:
| Related News Press |
Chip Technology
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Programmable electron-induced color router array May 14th, 2025
Enhancing power factor of p- and n-type single-walled carbon nanotubes April 25th, 2025
Ultrafast plasmon-enhanced magnetic bit switching at the nanoscale April 25th, 2025
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||