Home > News > Test tube transistor devised via molecular lithography
December 17th, 2004
Test tube transistor devised via molecular lithography
Abstract:
... the Israel Institute of Technology (Haifa) claimed to have developed a field-effect transistor via a test tube -- with typical spacing between junctions as small as 10-nm. The functional element in the FET is a semiconducting signal wall carbon nanotube.
Source:
* siliconstrategies
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