Home > News > Samsung begins making DRAMs on 90-nm process
September 9th, 2004
Samsung begins making DRAMs on 90-nm process
Abstract:
Korean electronics giant Samsung Electronics said it has started mass producing 512-Mbit double data rate synchronous DRAMs using a 90-nanometer manufacturing process and 300-mm diameter wafers.
Source:
EETimes
| Related News Press |
Chip Technology
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Programmable electron-induced color router array May 14th, 2025
Memory Technology
Researchers tackle the memory bottleneck stalling quantum computing October 3rd, 2025
First real-time observation of two-dimensional melting process: Researchers at Mainz University unveil new insights into magnetic vortex structures August 8th, 2025
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Announcements
Rice membrane extracts lithium from brines with greater speed, less waste October 3rd, 2025
Researchers develop molecular qubits that communicate at telecom frequencies October 3rd, 2025
Next-generation quantum communication October 3rd, 2025
"Nanoreactor" cage uses visible light for catalytic and ultra-selective cross-cycloadditions October 3rd, 2025
|
|
||
|
|
||
| The latest news from around the world, FREE | ||
|
|
||
|
|
||
| Premium Products | ||
|
|
||
|
Only the news you want to read!
Learn More |
||
|
|
||
|
Full-service, expert consulting
Learn More |
||
|
|
||