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March 1st, 2008

Freescale Pushing MRAM Technology Toward Automotive Goal

Abstract:
Freescale Semiconductor Inc. (Austin, Texas) is continuing its push to bring magneto-resistive random access memory (MRAM) technology to the marketplace, emphasizing the reliability of the new memory technology.

Freescale's 4 Mb MRAM has much higher soft error rate (SER) immunity than conventional SRAMs, with a failure in time (FIT) rate of one soft error in 107 device hours, said MRAM marketing manager David Bondurant.

Freescale's goal is to introduce MRAM to its lineup of automotive controllers. To that end, the company is developing a 16 Mb MRAM based on 130 nm design rules, and will port its MRAM technology to the company's automotive-grade 130 nm process, SMOS 10. Also, the company is working to combine MRAM — which Bondurant said is "basically a magnetometer" at heart — with sensors, including accelerometers.

Source:
semiconductor.net

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