Home > News > Toshiba Validates Imprint Lithography for <32 nm
October 16th, 2007
Toshiba Validates Imprint Lithography for <32 nm
Abstract:
Molecular Imprints Inc. (MII, Austin, Texas) today announced that Toshiba Semiconductor Co. (Tokyo) has validated the use of MII's imprint lithography technology for 22 nm node CMOS devices.
Using MII's Imprio 250 system, the memory manufacturer was able to print 18 nm isolated features and 24 nm dense features with <1 nm critical dimension uniformity (CDU) and <2 nm line edge roughness (LER). The Toshiba demonstrations also showed improved defectivity and overlay results for imprint lithography. Defectivity levels of as low as <0.3 defects per cm2 are approaching those of immersion lithography, and device overlay results were also within Toshiba's required specifications. "It's a very clear demonstration that we've got lithographic capability for 32 nm and below," said Mark Melliar-Smith, MII's CEO.
Source:
semiconductor.net
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