Home > News > IMEC Touts High-Performance Ge pMOS
December 12th, 2006
IMEC Touts High-Performance Ge pMOS
Abstract:
Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC http://www.imec.be is detailing high-performance germanium (Ge) pMOS devices using a silicon (Si) compatible process flow at the IEEE International Electron Devices Meeting being held in San Francisco this week.
Source:
broadcastnewsroom.com
Bookmark:
| Related News Press |
Chip Technology
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Programmable electron-induced color router array May 14th, 2025
Announcements
Rice membrane extracts lithium from brines with greater speed, less waste October 3rd, 2025
Researchers develop molecular qubits that communicate at telecom frequencies October 3rd, 2025
Next-generation quantum communication October 3rd, 2025
"Nanoreactor" cage uses visible light for catalytic and ultra-selective cross-cycloadditions October 3rd, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||