Home > News > Nanowire transistors outperform MOSFETs
May 25th, 2006
Nanowire transistors outperform MOSFETs
Abstract:
Researchers at Harvard University, US, say they have made the best nanowire transistors to date. The devices consisted of germanium/silicon core/shell nanowire field-effect transistors (FETs) using high-κ dielectrics and a metal top gate geometry.
Source:
nanotechweb
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