Nanotechnology Now - News Story: Infineon aims for 70nm DRAMs in '06

Home > News > Infineon aims for 70nm DRAMs in '06

March 14th, 2006

Infineon aims for 70nm DRAMs in '06

Abstract:
The company is currently ramping up its 90nm DRAM products, with plans to begin producing 70nm parts by year's end at its 300mm fab in Dresden, Germany.

Source:
EETimes

Bookmark:

Related News Press

Memory Technology

Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024

Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023

Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023

Rensselaer researcher uses artificial intelligence to discover new materials for advanced computing Trevor Rhone uses AI to identify two-dimensional van der Waals magnets May 12th, 2023

Announcements

Development of 'transparent stretchable substrate' without image distortion could revolutionize next-generation displays Overcoming: Poisson's ratio enables fully transparent, distortion-free, non-deformable display substrates February 28th, 2025

Unraveling the origin of extremely bright quantum emitters: Researchers from Osaka University have discovered the fundamental properties of single-photon emitters at an oxide/semiconductor interface, which could be crucial for scalable quantum technology February 28th, 2025

Closing the gaps — MXene-coating filters can enhance performance and reusability February 28th, 2025

Rice researchers harness gravity to create low-cost device for rapid cell analysis February 28th, 2025



Premium Products


	Only the news you want to read! Learn More



	Full-service, expert consulting Learn More




	The latest news from around the world, FREE