Home > News > Simulation Program Predicts Resistivity in Nanodevices
January 18th, 2006
Simulation Program Predicts Resistivity in Nanodevices
Abstract:
As nanoscale circuits continue to shrink, electrical resistivity increases in the wiring and limits the maximum circuit speed. A new simulation program developed by researchers at the National Institute of Standards and Technology (NIST) and George Washington University (GWU) can be used to predict such increases with greater input flexibility and model accuracy than other methods. The software program is expected to help the semiconductor industry design and test devices more efficiently and with greater cost-effectiveness.
Source:
NIST
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