Home > News > Tunnelling electrons speed up large area carbon electronics
January 3rd, 2006
Tunnelling electrons speed up large area carbon electronics
Abstract:
Researchers at the Advanced Technology Institute at the University of Surrey have reported in the January 2006 issue of Nature Materials the first demonstration of negative resistance in amorphous carbon semiconductors. This offers the prospect of low-cost electronic devices switching at Gighertz rates.
Source:
University of Surrey
Bookmark:
| Related News Press |
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
Materials/Metamaterials/Magnetoresistance
Researchers unveil a groundbreaking clay-based solution to capture carbon dioxide and combat climate change June 6th, 2025
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Institute for Nanoscience hosts annual proposal planning meeting May 16th, 2025
Announcements
Electrifying results shed light on graphene foam as a potential material for lab grown cartilage June 6th, 2025
Quantum computers simulate fundamental physics: shedding light on the building blocks of nature June 6th, 2025
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||