Home > News > Sony, Toshiba co-develop 45nm embedded DRAM
June 20th, 2005
Sony, Toshiba co-develop 45nm embedded DRAM
Abstract:
Sony Corp. and Toshiba Corp. have reported they developed the first 45nm embedded DRAM cell by scaling embedded DRAM cells down to 0.069 square microns. Both companies invested about 20 billion yen for the 45 nm node process development.
Source:
EETimes
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