Home > News > Improving Computer Memory, Metal Seals, And Nanodevices
August 9th, 2004
Improving Computer Memory, Metal Seals, And Nanodevices
Abstract:
A method that creates smooth and strong interfaces between metals and metal oxides without high-temperature brazing has been patented by researchers at Sandia National Laboratories, Pacific Northwest National Laboratory, and the University of North Texas. The method can improve magnetic random-access memories, which allow next-generation computers to boot up instantly yet retain their entire memories after power interruptions.
Source:
spacedaily
Bookmark:
| Related News Press |
Memory Technology
Researchers tackle the memory bottleneck stalling quantum computing October 3rd, 2025
First real-time observation of two-dimensional melting process: Researchers at Mainz University unveil new insights into magnetic vortex structures August 8th, 2025
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Discoveries
Researchers develop molecular qubits that communicate at telecom frequencies October 3rd, 2025
Next-generation quantum communication October 3rd, 2025
"Nanoreactor" cage uses visible light for catalytic and ultra-selective cross-cycloadditions October 3rd, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||