Home > News > NVE Granted Patent on MRAM Innovation
June 21st, 2004
NVE Granted Patent on MRAM Innovation
Abstract:
NVE Corporation announced that the U.S. Patent and Trademark Office issued the company a patent for an innovative type of MRAM. Patent number 6,744,086, entitled "Current Switched Magnetoresistive Memory Cell," was granted in June and concerns spin-momentum magnetic memory cells. The patent also relates to thermally-assisted spin-momentum writing.
Source:
Businesswire
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