Home > News > Samsung to double flash capacity, debuts 90-nm NAND
April 1st, 2004
Samsung to double flash capacity, debuts 90-nm NAND
Abstract:
Looking to extend its lead in flash memory, South Korea's Samsung Electronics Co. Ltd. plans to double its flash capacity and has begun shipping its first NAND part based on a new 90-nm process technology. On the product front, Samsung has begun shipping a 2-gigabit NAND device, built around the 90-nm process, said Tom Quinn, vice president of memory sales and marketing for the company's U.S unit, Samsung Semiconductor Inc., based in San Jose.
Source:
EETimes
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