Home > News > Successful Development of New Next-Gen Non-Volatile Memory cell
December 28th, 2003
Successful Development of New Next-Gen Non-Volatile Memory cell
Abstract:
Asahi Glass Co., Ltd. and research group led by Koyanagi, professor of Graduate school of Engineering, Tohoku University, have succeeded in development of a new non-volatile memory, named Metal Nano Dot (MND) Memory. The MND memory is applied the deposition technology of MND film based on the synergy ceramic technologies possessed by Asahi Glass Co.
Source:
AGC
Bookmark:
| Related News Press |
Memory Technology
Researchers tackle the memory bottleneck stalling quantum computing October 3rd, 2025
First real-time observation of two-dimensional melting process: Researchers at Mainz University unveil new insights into magnetic vortex structures August 8th, 2025
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||