Home > News > NEC, Tokuyama develop resist for 8-nm line widths
November 22nd, 2003
NEC, Tokuyama develop resist for 8-nm line widths
Abstract:
NEC Corp. and Tokuyama Corp. have jointly developed electron beam resist that enables etching an 8 nanometer line with a line edge roughness of less than 1 nm. The new resist is chloromethyl calix 4 arene, which consists of four benzene rings connected in a 0.7-nm diameter ring.
Source:
EETimes
Bookmark:
| Related News Press |
Chip Technology
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Programmable electron-induced color router array May 14th, 2025
Enhancing power factor of p- and n-type single-walled carbon nanotubes April 25th, 2025
Ultrafast plasmon-enhanced magnetic bit switching at the nanoscale April 25th, 2025
Tools
Rice researchers harness gravity to create low-cost device for rapid cell analysis February 28th, 2025
New 2D multifractal tools delve into Pollock's expressionism January 17th, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||