Home > News > Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM
September 29th, 2003
Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM
Abstract:
Korean electronics giant Samsung Electronics Co. Ltd. said Monday (Sept. 29) it has developed a 4-Gbit NAND-style flash memory and 512-Mbut DRAM using advanced manufacturing process technologies. The NAND-flash device was fabricated using a 70-nm process technology. The DRAM was made using an 80-nm process, Samsung said. In addition Samsung announced what it called Fusion memory, which includes the monolithic integration of memory with logic.
Source:
EETimes
Bookmark:
| Related News Press |
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||