Home > News > Technological breakthrough in silicon photonics
August 27th, 2003
Technological breakthrough in silicon photonics
Abstract:
A technique for tailormaking silicon nanocrystals on 4-inch wafers has been developed and submitted for patent (German patent number: DE 101 04 193 A 1) by Dr. Margit Zacharias and colleagues of the Max Planck Institute of Microstructure Physics, Saale, Germany. This process makes possible the cost-effective manufacture of high-density arrays of silicon clusters or nanocrystals.
Source:
EurekAlert
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