Home > News > FinFETs could be used at 65-nm node
July 18th, 2003
FinFETs could be used at 65-nm node
Abstract:
The FinFET, a transistor structure with a fin-like channel being touted as a way to scale silicon down to 10-nm gate lengths, could be used as early as the 65-nm process node, according to Calvin Chenming Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd.
Source:
EETimes
Bookmark:
| Related News Press |
Chip Technology
New ocelot chip makes strides in quantum computing: Based on "cat qubits," the technology provides a new way to reduce quantum errors February 28th, 2025
Enhancing transverse thermoelectric conversion performance in magnetic materials with tilted structural design: A new approach to developing practical thermoelectric technologies December 13th, 2024
Bringing the power of tabletop precision lasers for quantum science to the chip scale December 13th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||