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Home > News > FinFETs could be used at 65-nm node
July 18th, 2003
FinFETs could be used at 65-nm node
Abstract:
The FinFET, a transistor structure with a fin-like channel being touted as a way to scale silicon down to 10-nm gate lengths, could be used as early as the 65-nm process node, according to Calvin Chenming Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd.
Source:
EETimes
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