Home > News > Room-temperature single-electron devices made easier
June 30th, 2003
Room-temperature single-electron devices made easier
Abstract:
Physicists at Cambridge University in the UK and the Japan Science & Technology Corporation in Tokyo have exploited a "natural" system of tunnel barriers in nanocrystalline silicon to make a single-electron transistor that operates at room temperature.
Source:
PhysicsWeb
Related News Press |
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
![]() |
||
![]() |
||
The latest news from around the world, FREE | ||
![]() |
![]() |
||
Premium Products | ||
![]() |
||
Only the news you want to read!
Learn More |
||
![]() |
||
Full-service, expert consulting
Learn More |
||
![]() |