Home > News > A revisited concept for parallel e-beam Lithography
May 5th, 2003
A revisited concept for parallel e-beam Lithography
Abstract:
The International Technology Roadmap for Semiconductors (2001 ITRS) and the Technology Roadmap for Nanoelectronics (TRN) favours the Extreme UV (EUV) approach for lithography at 45nm feature size and below. Nevertheless EBDW-techniques (E-Beam direct write) are still considered as potential candidates because sub 10 nm beam sizes are “easily” obtained. PDF.
Source:
IVMC
Bookmark:
| Related News Press |
Chip Technology
Lab to industry: InSe wafer-scale breakthrough for future electronics August 8th, 2025
A 1960s idea inspires NBI researchers to study hitherto inaccessible quantum states June 6th, 2025
Programmable electron-induced color router array May 14th, 2025
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||