Nanotechnology Now

Our NanoNews Digest Sponsors
Heifer International



Home > News > TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures

August 22nd, 2005

TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures

Abstract:
"This result is an important step towards HVPE technology for InN-containing materials and devices including high brightness blue, ultra violet, and white light emitting diodes (LEDs). TDI has already demonstrated GaN-based devices by proprietary patented HVPE technology. New process allows us to deposit InN epitaxial layers or 3-dimentional nano-size structures in a controllable manner."

Source:
marketwire

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Materials/Metamaterials/Magnetoresistance

New material to make next generation of electronics faster and more efficient With the increase of new technology and artificial intelligence, the demand for efficient and powerful semiconductors continues to grow November 8th, 2024

How surface roughness influences the adhesion of soft materials: Research team discovers universal mechanism that leads to adhesion hysteresis in soft materials March 8th, 2024

Nanoscale CL thermometry with lanthanide-doped heavy-metal oxide in TEM March 8th, 2024

Focused ion beam technology: A single tool for a wide range of applications January 12th, 2024

Announcements

Nanotechnology: Flexible biosensors with modular design November 8th, 2024

Exosomes: A potential biomarker and therapeutic target in diabetic cardiomyopathy November 8th, 2024

Turning up the signal November 8th, 2024

Nanofibrous metal oxide semiconductor for sensory face November 8th, 2024

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books



NNN
The Hunger Project