Home > News > Hybrid tunnel diodes could leapfrog Moore's Law
October 30th, 2003
Hybrid tunnel diodes could leapfrog Moore's Law
Abstract:
Semiconductor researchers have known since the 1950s that the quantum-confinement effects of tunnel diodes boost circuit speed and current handling while reducing component count and power consumption. But processing difficulties long confined tunnel diodes to exotic materials and discrete devices. Now some researchers say a new CMOS-compatible tunnel diode process could extend the lifetime of existing silicon fabs by leapfrogging the next node in the semiconductor road map (as defined by Moore's Law).
Source:
EETimes
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