Home > News > Diamond chips sparkle after N-doping breakthrough
September 23rd, 2003
Diamond chips sparkle after N-doping breakthrough
Abstract:
Two recent developments have bought diamond semiconductor devices closer to reality. Diamond has an extremely high thermal conductivity, can withstand high electric fields, and can be made into a semiconductor -- ideal for power devices, one would think. Unfortunately, although it can be p-doped with boron, n-doping is proving to be a problem. By bonding oxygen molecules to the diamond surface, a thin insulating layer can be formed. “Nano FETs have been made in Japan using this,” says Nesladek.
Source:
ElectronicsNews
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