Home > News > Diamond chips sparkle after N-doping breakthrough
September 23rd, 2003
Diamond chips sparkle after N-doping breakthrough
Abstract:
Two recent developments have bought diamond semiconductor devices closer to reality. Diamond has an extremely high thermal conductivity, can withstand high electric fields, and can be made into a semiconductor -- ideal for power devices, one would think. Unfortunately, although it can be p-doped with boron, n-doping is proving to be a problem. By bonding oxygen molecules to the diamond surface, a thin insulating layer can be formed. “Nano FETs have been made in Japan using this,” says Nesladek.
Source:
ElectronicsNews
Bookmark:
| Related News Press |
Chip Technology
New ocelot chip makes strides in quantum computing: Based on "cat qubits," the technology provides a new way to reduce quantum errors February 28th, 2025
Enhancing transverse thermoelectric conversion performance in magnetic materials with tilted structural design: A new approach to developing practical thermoelectric technologies December 13th, 2024
Bringing the power of tabletop precision lasers for quantum science to the chip scale December 13th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||