Home > News > Nantero reports 10-Gbit nanotube memory array
May 10th, 2003
Nantero reports 10-Gbit nanotube memory array
Abstract:
Nantero Inc., a start-up company looking to use nanometer-scale structures to create a nonvolatile RAM, has said it has created the basis of a 10-Gbit memory, an array of more than 10 billion carbon nanotube "junctions" on a silicon wafer. (more on earlier story)
Source:
EETimes
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