Home > Nanotechnology Columns > FEI > Overcoming Challenges in Advanced Semiconductor Imaging & Analysis
Dan Fineberg FEI Global Marketing Manager, NanoElectroincs FEI Company |
Abstract:
Time is Money in Nano-scale Semiconductor Manufacturing
Today's advanced semiconductors are truly nano-scale devices. For example, the latest generally-available PC processors feature transistor line-widths as small as 45 nm, and process development is underway at leading manufacturers for 32 nm, 22 nm, and even smaller geometries.
The adage, "Time is money" has an overwhelming relevance in the world of volume semiconductor production. Getting to market, enhancing yields and ramping to volume-- faster-- is business-critical, and overcoming the associated nano-scale manufacturing challenges requires sophisticated "forensics." In other words, advanced manufacturing process development and control applications require advanced imaging and analysis tools to characterize defects, analyze failures, and measure critical dimensions.
December 18th, 2007
Overcoming Challenges in Advanced Semiconductor Imaging & Analysis
Time is Money in Nano-scale Semiconductor Manufacturing
Today's advanced semiconductors are truly nano-scale devices. For example, the latest generally-available PC processors feature transistor line-widths as small as 45 nm, and process development is underway at leading manufacturers for 32 nm, 22 nm, and even smaller geometries.
The adage, "Time is money" has an overwhelming relevance in the world of volume semiconductor production. Getting to market, enhancing yields and ramping to volume-- faster-- is business-critical, and overcoming the associated nano-scale manufacturing challenges requires sophisticated "forensics." In other words, advanced manufacturing process development and control applications require advanced imaging and analysis tools to characterize defects, analyze failures, and measure critical dimensions.
Using the Right Tool for the Job
Scanning electron microscope (SEM) tools have been used for top-down imaging and analysis applications for many years. To get deeper, focused ion beam (FIB) tools are used to cross-section samples for SEM imaging and analysis in three dimensions. To improve the efficiency and effectiveness of those applications, FEI invented DualBeam™ platforms, with SEM and FIB columns, more than a decade ago.
But as geometries shrink, new application methods, tools and techniques are entering the fray. Transmission Electron Microscope (TEM) and Scanning TEM (STEM) tools can reach far higher resolutions than traditional SEM tools. In fact, FEI recently announced that its top-of-the-line Titan™ TEM platform has achieved 0.5 Angstrom resolution (just over half the diameter of a Hydrogen atom). Such atomic-scale imaging is now required for a growing range of advanced semiconductor manufacturing process development and control applications -- crystal strain analysis is one of many examples. Today, a range of SEM, STEM and TEM platforms can be found in most advanced semiconductor labs (see figure 1, below).
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